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SUMMARY:Role of a-Se device configuration in UV detection efficiency chara
 cterized by Time of Flight
DTSTART;VALUE=DATE-TIME:20210915T160000Z
DTEND;VALUE=DATE-TIME:20210915T170000Z
DTSTAMP;VALUE=DATE-TIME:20260510T054510Z
UID:indico-contribution-86@indico.physics.ucsd.edu
DESCRIPTION:Speakers: Kaitlin Hellier (University of California\, Santa Cr
 uz)\nAmorphous selenium (a-Se) detectors have made significant advances in
  the last few decades\, with applications in X-ray\, UV\, and visible ligh
 t detection and potential for high energy particle detection. A vertical a
 rchitecture\, in which light passes through a transparent conductor to the
  a-Se layer\, is common in commercial devices\; however\, a lateral struct
 ure\, in which light passes only through the selenium positioned between t
 wo contacts\, presents an opportunity for improved device performance and 
 application. In this work we compare the performance of vertical devices w
 ith a-Se thicknesses of 5\, 10\, and 15 um and lateral devices with electr
 ode spacing of the same distances\, using time of flight (TOF) and convers
 ion efficiency\, and introduce optical slits for lateral structures as a w
 ay to better perform carrier specific TOF in a-Se devices.\n\nhttps://indi
 co.physics.ucsd.edu/event/1/contributions/86/
LOCATION:
URL:https://indico.physics.ucsd.edu/event/1/contributions/86/
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