Speaker
Description
Amorphous selenium (a-Se) detectors have made significant advances in the last few decades, with applications in X-ray, UV, and visible light detection and potential for high energy particle detection. A vertical architecture, in which light passes through a transparent conductor to the a-Se layer, is common in commercial devices; however, a lateral structure, in which light passes only through the selenium positioned between two contacts, presents an opportunity for improved device performance and application. In this work we compare the performance of vertical devices with a-Se thicknesses of 5, 10, and 15 um and lateral devices with electrode spacing of the same distances, using time of flight (TOF) and conversion efficiency, and introduce optical slits for lateral structures as a way to better perform carrier specific TOF in a-Se devices.
